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PolarHV TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXFN 44N80P
V DSS
I D25
R DS(on)
t rr
= 800 V
= 39 A
≤ 190 m Ω
≤ 250 ns
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B (IXFN)
V DSS
V DGR
V GS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M Ω
Continuous
Transient
800
800
± 30
± 40
V
V
V
V
E153432
G
S
I D25
I DM
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
39
100
A
A
D
S
I AR
E AR
E AS
dv/dt
P D
T J
T JM
T stg
T L
V ISOL
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 10 Ω
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
I ISOL < 1 mA, 10 seconds
22
80
3.4
10
694
-55 ... +150
150
-55 ... +150
300
2500
3000
A
mJ
J
V/ns
W
° C
° C
° C
° C
V~
V~
G = Gate D = Drain
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
? International standard package
? Encapsulating epoxy meets
UL 94 V-0, flammability classification
? miniBLOC with Aluminium nitride
isolation
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
M d
Weight
Mounting torque
Terminal torque
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
30 g
rated
? Low package inductance
? Fast intrinsic Rectifier
Applications
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
BV DSS V GS = 0 V, I D = 800 μ A
Characteristic Values
Min. Typ. Max.
800 V
? DC-DC converters
? Synchronous rectification
? Battery chargers
? Switched-mode and resonant-mode
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 8 mA
V GS = ± 30 V, V DS = 0 V
V DS = V DSS
V GS = 0 V
T J = 125 ° C
3.0
5.0
± 200
50
1.5
V
nA
μ A
mA
power supplies
? DC choppers
? Temperature and lighting controls
? Low voltage relays
Advantages
R DS(on)
V GS = 10 V, I D = 0.5 I TD25 , Note 1
190
m Ω
? Easy to mount
? Space savings
? High power density
DS99503E(06/06)
? 2006 IXYS All rights reserved
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